Vishay SIH Type N-Channel MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS-stocknr.:
- 239-5383
- Fabrikantnummer:
- SIHP24N80AEF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,66
(excl. BTW)
€ 6,84
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 890 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,83 | € 5,66 |
| 20 - 48 | € 2,665 | € 5,33 |
| 50 - 98 | € 2,41 | € 4,82 |
| 100 - 198 | € 2,27 | € 4,54 |
| 200 + | € 2,13 | € 4,26 |
*prijsindicatie
- RS-stocknr.:
- 239-5383
- Fabrikantnummer:
- SIHP24N80AEF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | SIH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series SIH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated
Gerelateerde Links
- Vishay SIH Type N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Vishay SIH Type N-Channel MOSFET 850 V TO-247AC SIHG24N80AEF-GE3
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay N-Channel MOSFET 400 V TO-220AB SIHP25N40D-GE3
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
