Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

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€ 116,00

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  • Verzending vanaf 02 december 2026
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50 - 50€ 1,92€ 96,00
100 - 200€ 1,805€ 90,25
250 +€ 1,668€ 83,40

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RS-stocknr.:
239-5382
Fabrikantnummer:
SIHP24N80AEF-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

800V

Series

EF

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.195Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

208W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Drain Current - SIHP24N80AEF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronic systems. It is supplied in a through-hole TO-220AB package for straightforward mounting and heat-sink attachment, and it is intended for applications that require robust voltage handling and elevated operating temperatures.

Features and Benefits:


• 800V drain rating enables high-voltage switching applications • 20A continuous drain current supports significant load currents • 0.195Ω Rds(on) reduces conduction losses under load • 208W power dissipation allows higher thermal loading • 90nC typical gate charge facilitates switching performance optimisation • 150°C maximum junction temperature endures elevated thermal environments

Applications


• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for switched-mode power supplies in automation equipment • Can be used for power regulation in electrical control panels

What gate voltage limits must be observed during drive design?


The device requires gate drive voltages within ±30V maximum between gate and source to avoid gate overstress.

How should thermal management be approached for sustained operation?


Use a heat-sink attached to the TO-220AB tab and ensure adequate airflow to handle up to 208W dissipation under specified mounting and cooling conditions.

What temperature range is acceptable for deployment in harsh environments?


The component operates from -55°C up to a maximum of 150°C junction temperature, permitting use in elevated-temperature assemblies.

Are there considerations for switching speed versus drive energy?


The typical gate charge of 90nC requires sufficient drive current to achieve desired switching times while managing gate-drive energy and EMI.

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