Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3

RS-stocknr.:: 653-139
Fabrikantnummer:: SIHP11N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 64,85

(excl. BTW)

€ 78,45

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

1.000 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 200	€ 1,297	€ 64,85
250 +	€ 1,271	€ 63,55

*prijsindicatie

RS-stocknr.:: 653-139
Fabrikantnummer:: SIHP11N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.483Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.483Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP11N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHP11N80AEF-GE3

This power MOSFET is a high-voltage switching device designed for use in industrial power conversion and control systems. It operates as an N‑channel enhancement‑mode transistor in a through‑hole TO‑220AB package, providing a practical option for engineers requiring a discrete component for board‑level mounting and thermal management in demanding environments.

Features and Benefits:

• 800V drain rating enabling high-voltage switching applications • 8A continuous drain current supporting moderate load currents • Rds(on) 0.483Ω reducing conduction losses under load • 78W power dissipation for effective thermal handling • 27nC typical gate charge for predictable switching dynamics • 150°C maximum operating temperature for elevated-temperature use

Applications

• Suitable for industrial motor drive front-ends handling high voltage • Ideal for power supplies requiring high-voltage switching elements • Used for inverter stages in medium-power electrical systems • Can be used for brake and snubber circuits in automation equipment

What gate voltage range should be observed for safe operation?

The device requires gate excursions within ±30V maximum relative to its source to avoid gate over‑stress.

How does the package affect thermal management on a populated board?

The TO‑220AB through‑hole format allows direct heatsinking to the rear tab, improving conduction to an external heatsink and aiding removal of 78W of dissipated power under appropriate cooling.

What ambient conditions limit its deployment?

The component is specified to operate down to -55°C and up to 150°C junction temperature

system thermal design must ensure junction temperatures remain below the 150°C limit.

What switching consideration arises from the gate charge figure?

A typical gate charge of 27nC lets designers estimate drive current requirements and switching losses when selecting a gate driver and predicting turn‑on/turn‑off timing.