Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3

RS-stocknr.:: 239-8620
Fabrikantnummer:: SIHA15N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3

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RS-stocknr.:: 239-8620
Fabrikantnummer:: SIHA15N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.35Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Power Dissipation Pd	33W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.35Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Power Dissipation Pd 33W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHA15N80AEF-GE3

Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3

This power MOSFET is a high-voltage, N-channel semiconductor device designed for switching and power-management duties in demanding environments. It is supplied in a TO-220 package for surface mounting and is intended for applications that require robust high-voltage capability, controlled gate behaviour and operation across a wide temperature span.

Features and Benefits:

• 850V drain voltage enables high-voltage switching applications
• 6A continuous drain current supports medium-power loads
• 0.35Ω Rds(on) minimises conduction losses under load
• 33W power dissipation allows sustained thermal handling
• 54nC typical gate charge permits predictable gate-drive design
• ±30V gate rating protects against excessive gate stress

Applications

• Suitable for industrial high-voltage power converters
• Ideal for automotive electronics meeting AEC‑Q101 needs
• Used with switch-mode power supplies and inverters
• Can be used for motor drive front-end switching
• Suitable for auxiliary power supplies in harsh environments

What temperature range can it operate within reliably?

It is specified to function from -55°C up to +150°C for wide ambient and junction tolerance.

How is gate-drive design influenced by the device?

The typical gate charge of 54nC defines the gate energy requirement and informs driver current and switching-speed trade-offs.

What packaging and mounting considerations apply?

The TO-220 package is provided for surface mounting and offers convenient thermal connection options for heatsinking.

What polarity and channel behaviour should designers expect?

The device is an N-channel depletion-mode transistor, requiring appropriate biasing and control strategies in circuit designs.