Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220

RS-stocknr.:: 239-8619
Fabrikantnummer:: SIHA15N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220

Subtotaal (1 tube van 50 eenheden)*

€ 53,60

(excl. BTW)

€ 64,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

950 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 +	€ 1,072	€ 53,60

*prijsindicatie

RS-stocknr.:: 239-8619
Fabrikantnummer:: SIHA15N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.35Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	33W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.35Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 33W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHA15N80AEF-GE3

Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3

This power MOSFET is a high-voltage switching transistor intended for demanding electronic and automotive environments. It functions as an N-channel depletion device in a rugged TO-220 surface package, designed to handle elevated voltages and temperatures while interfacing with standard gate-drive levels.

Features and Benefits:

• 850V drain rating enables high-voltage switching applications • 6 A continuous drain current supports moderate load currents • 33W power dissipation allows sustained thermal handling • 0.35 Ω Rds(on) reduces conduction losses under load • 54 nC typical gate charge permits controlled switching dynamics • 30V maximum gate tolerance protects against gate overvoltage

Applications

• Suitable for high-voltage power supplies in industrial automation • Ideal for automotive subsystems requiring AEC‑Q101 compliance • Used for motor-control circuits needing robust switching devices • Can be used for DC-DC converters in electrical systems • Used with high-voltage inverter stages in electromechanical equipment

What temperature extremes can this device tolerate in operation?

It operates across a wide temperature span from -55 °C up to +150 °C, permitting use in harsh thermal environments.

How is the device mounted and integrated into assemblies?

It is supplied in a TO-220 surface-mount package with three pins for straightforward through-panel or heatsink-attached mounting.

What protection level is provided for environmental directives?

The component meets RoHS standards, indicating restricted hazardous substance compliance for materials.

How does the gate specification affect drive circuitry?

The gate accepts up to 30 V, so driver stages should be designed to remain within this limit to avoid gate stress.