Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3

RS-stocknr.:: 239-8621
Fabrikantnummer:: SiHA17N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3

Subtotaal (1 tube van 50 eenheden)*

€ 63,55

(excl. BTW)

€ 76,90

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 1.050 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 1,271	€ 63,55

*prijsindicatie

RS-stocknr.:: 239-8621
Fabrikantnummer:: SiHA17N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.305Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	34W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.305Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 34W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SiHA17N80AEF-GE3

Vishay Series EF Power MOSFET, 850V Maximum Drain Source Voltage, 6.5A Maximum Continuous Drain Current - SiHA17N80AEF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in demanding electronic systems. It is supplied in a TO-220 package intended for surface mounting and supports extended operating temperatures, making it suitable for applications requiring wide thermal-range performance and automotive-grade robustness.

Features and Benefits:

• 850V drain-source rating enables high-voltage switching applications
• 6.5A continuous drain current supports moderate load currents
• 0.305Ω Rds(on) reduces conduction losses under load
• 63nC typical gate charge lowers switching energy demands
• 34W maximum power dissipation manages thermal stress in operation
• -55°C to +150°C operating range withstands extreme temperatures

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for automotive electronics meeting AEC‑Q101 requirements
• Used with industrial motor drives requiring robust switching
• Can be used for SMPS stages handling high-voltage rails
• Used for power switching in renewable-energy interfaces

What gate voltage limits must be observed for safe operation?

The device must not exceed a gate-source voltage of 30V to prevent gate-oxide stress.

How does the package influence thermal handling?

The TO-220 package allows effective heat-sinking and supports the stated 34W power dissipation when mounted appropriately.

What channel characteristics affect circuit topology choices?

Being an N-channel depletion-mode device, it conducts without gate drive and requires gate-biasing strategies to control off-state behaviour.

Is the device suitable for regulated automotive environments?

It conforms to AEC‑Q101 automotive standards and is specified for extended temperature limits to meet vehicle-system requirements.