Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

RS-stocknr.:: 239-8636
Fabrikantnummer:: SIHK055N60E-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

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RS-stocknr.:: 239-8636
Fabrikantnummer:: SIHK055N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.056Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	236W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.056Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 236W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 42A Maximum Continuous Drain Current - SIHK055N60E-T1-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power management in demanding industrial and automotive contexts. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and Compact packaging are required.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 42A continuous drain current supports heavy-load operation • 0.056Ω low Rds(on) reduces conduction losses • 54nC typical gate charge balances switching speed and drive effort • 236W power dissipation allows sustained power handling • Rated to +150°C for elevated-temperature environments

Applications

• Suitable for power conversion stages in industrial automation • Ideal for motor drive inverter switching circuits • Used for high-voltage DC-DC converters in electrical systems • Can be used for automotive power management modules that require AEC-Q101 qualification

What mounting style is required for board assembly?

It is supplied in a PowerPAK 10x12 surface package with eight pins designed for surface-mount soldering processes and thermal conduction to the PCB.

How does the gate drive requirement affect controller selection?

The device supports gate-source voltages up to 30V and has a typical gate charge of 54nC, so drivers must source sufficient charge for desired switching transitions while remaining within the VGS limit.

What environmental extremes can it withstand during operation?

The component is specified for operation from -55°C up to +150°C, enabling use across a broad ambient and junction temperature range in harsh settings.

Are there industry approvals relevant to automotive use?

It meets AEC-Q101 standards for automotive-grade semiconductors and is RoHS compliant for material restrictions.