Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1

RS-stocknr.:: 243-9268
Fabrikantnummer:: IPB110P06LMATMA1
Fabrikant:: Infineon

Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1

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RS-stocknr.:: 243-9268
Fabrikantnummer:: IPB110P06LMATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB110P06LMATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB110P06LMATMA1

This MOSFET is a P‑channel semiconductor switch designed for high-current and high-voltage applications, supplied in a surface-mount TO-263 package. It operates across a wide temperature span and is suitable for power conversion and switching tasks where thermal tolerance and Compact mounting are required.

Features and Benefits:

• Very low on-resistance enables reduced conduction losses
• High continuous drain current supports heavy load handling
• 100V drain-source rating allows higher-voltage deployment
• 81W power dissipation provides robust thermal capacity
• 80nC typical gate charge permits responsive switching
• RoHS conformity minimises hazardous substance content

Applications

• Suitable for synchronous rectification in power supplies
• Useful in motor-drive downstream stages requiring high current
• Can be used for high-voltage DC-DC converter switches
• Ideal for Compact surface-mount power modules
• Used for fast switching in transient load environments

What gate voltage limits must be observed during use?

Gate-source voltage must not exceed ±20V to avoid damaging the gate structure.

How does temperature range affect deployment options?

The device functions from -55°C to 175°C, allowing use in both cold-start and elevated-temperature conditions.

What mounting considerations apply for thermal performance?

Employ appropriate PCB thermal pads and heat-sinking with the TO-263 footprint to manage the 81W dissipation.

How does channel type influence circuit polarity?

As a P‑channel device, it requires appropriate polarity arrangements for high-side switching configurations.

What switching behaviour is indicated by its forward voltage?

A forward voltage of 1.1V reflects its conduction characteristic under specified drive and load conditions.