Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ063N04LS6ATMA1

RS-stocknr.:: 243-9311
Fabrikantnummer:: BSZ063N04LS6ATMA1
Fabrikant:: Infineon

Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ063N04LS6ATMA1

Subtotaal (5000 eenheden, op een rol van 5000)*

€ 1.970,00

(excl. BTW)

€ 2.385,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 13 oktober 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,394	€ 1.970,00

*prijsindicatie

RS-stocknr.:: 243-9311
Fabrikantnummer:: BSZ063N04LS6ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO8 5 x 6
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO8 5 x 6
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ063N04LS6ATMA1

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ063N04LS6ATMA1

This MOSFET is an N-channel power transistor designed for high-current switching in Compact surface-mount assemblies. It operates across a wide ambient temperature range and is suitable for applications requiring low conduction losses and substantial continuous current handling in a small package while complying with RoHS directives.

Features and Benefits:

• 0.7mΩ low on-resistance reduces conduction losses
• 212A continuous drain current enables heavy current handling
• 81W power dissipation supports high-power switching
• 40V drain-source rating allows medium-voltage applications
• 80nC typical gate charge enables predictable switching control
• 20V gate-source limit supports standard gate-drive voltages

Applications

• Suitable for high-current DC-DC converters in Compact power supplies
• Ideal for synchronous rectification in server power rails
• Used with motor drivers requiring robust surface-mount switches
• Can be used for battery management systems in high-load contexts
• Appropriate for power stages where low conduction loss matters

What mounting format does it use for PCB assembly?

It is supplied in an 8-pin SuperSO8 5x6 SMD package for surface mounting.

What thermal range can it withstand in operation?

It is rated to function between −55°C and 175°C without specification change.

How does gate drive affect switching performance?

Typical gate charge is 80nC, which determines drive current needed for the targeted switching speed.

Is it suitable for automotive specification requirements?

It does not carry an automotive standard designation and should be assessed against vehicle qualification needs.

What limitation should designers observe for gate voltage?

Gate-source voltage must not exceed 20V to avoid device stress.