Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- RS-stocknr.:
- 244-1567
- Fabrikantnummer:
- BSZ065N06LS5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.280,00
(excl. BTW)
€ 2.760,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 5.000 stuk(s) vanaf 17 juni 2027
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,456 | € 2.280,00 |
*prijsindicatie
- RS-stocknr.:
- 244-1567
- Fabrikantnummer:
- BSZ065N06LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ065N06LS5ATMA1
This MOSFET is a high-current N-channel switching device designed for surface-mount power management in demanding electronic systems. It operates across a wide temperature range and is intended for applications requiring substantial continuous drain current and efficient conduction with low forward voltage.
Features and Benefits:
• 212A continuous drain current delivers sustained high-current capability
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage
Applications
• Suitable for high-current DC-DC converters in power stages
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units
What thermal range can this device tolerate in operation?
It functions from −55°C up to +150°C enabling use in harsh temperature environments.
How is the component packaged for PCB assembly?
It comes in an 8-pin SuperSO8 5x6 surface-mount package for Compact board mounting.
What gate-drive considerations are needed for switching?
Drive circuitry must provide adequate charge for the typical 80nC gate charge to achieve the intended switching speed and respect the 20V maximum Vgs limit.
What type of channel conduction does it provide?
It is an N-channel device designed for enhanced current flow in low-side or high-side switching topologies.
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