Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223
- RS-stocknr.:
- 244-2262
- Fabrikantnummer:
- IPN50R2K0CEATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 363,00
(excl. BTW)
€ 438,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,121 | € 363,00 |
| 6000 - 6000 | € 0,115 | € 345,00 |
| 9000 + | € 0,112 | € 336,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2262
- Fabrikantnummer:
- IPN50R2K0CEATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements.
Extremely low losses due to very low FOM Rdson Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
Gerelateerde Links
- Infineon IPN Type N-Channel MOSFET 75 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- Infineon IPN Type N-Channel MOSFET 950 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223 IPN60R2K0PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
