Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223
- RS-stocknr.:
- 244-2262
- Fabrikantnummer:
- IPN50R2K0CEATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 363,00
(excl. BTW)
€ 438,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,121 | € 363,00 |
| 6000 - 6000 | € 0,115 | € 345,00 |
| 9000 + | € 0,112 | € 336,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2262
- Fabrikantnummer:
- IPN50R2K0CEATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements.
Extremely low losses due to very low FOM Rdson Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
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