Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1

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€ 3,075

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RS-stocknr.:
244-2271
Fabrikantnummer:
IPN60R600PFD7SATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Low switching losses Eoss, excellent thermal behavior

Fast body diode

Wide range portfolio of RDS(on) and package variations

Enables high power density designs and small form factors

Enables efficiency gains at higher switching frequencies

Excellent commutation ruggedness

Easy to select the right parts and optimize the design

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