Infineon IPN N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1
- RS-stocknr.:
- 244-2273
- Fabrikantnummer:
- IPN95R3K7P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 6,16
(excl. BTW)
€ 7,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 235 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,232 | € 6,16 |
| 50 - 120 | € 1,082 | € 5,41 |
| 125 - 245 | € 1,006 | € 5,03 |
| 250 - 495 | € 0,936 | € 4,68 |
| 500 + | € 0,878 | € 4,39 |
*prijsindicatie
- RS-stocknr.:
- 244-2273
- Fabrikantnummer:
- IPN95R3K7P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
Infineon IPN Series MOSFET, 950V Drain Source Voltage, 81W Power Dissipation - IPN95R3K7P7ATMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount applications where robust drain-source performance and wide temperature tolerance are required. It operates across a broad thermal range and is suitable for circuits demanding substantial power handling and gate-drive tolerance in Compact SOT-223 packaging.
Features and Benefits:
• 950V drain-source capability enabling high-voltage switching
• 3mΩ low on-resistance reducing conduction losses
• 6.1A continuous current supporting moderate load currents
• 81W power dissipation allowing sustained thermal performance
• 80nC typical gate charge facilitating predictable switching behaviour
• 20V gate tolerance permitting common gate-drive voltages
• 3mΩ low on-resistance reducing conduction losses
• 6.1A continuous current supporting moderate load currents
• 81W power dissipation allowing sustained thermal performance
• 80nC typical gate charge facilitating predictable switching behaviour
• 20V gate tolerance permitting common gate-drive voltages
Applications
• Suitable for high-voltage power conversion stages
• Ideal for industrial motor drive front-ends
• Used for switch-mode power supply primary switching
• Can be used for automotive power systems requiring qualification
• Used with Compact surface-mount assemblies on heat-managed boards
• Ideal for industrial motor drive front-ends
• Used for switch-mode power supply primary switching
• Can be used for automotive power systems requiring qualification
• Used with Compact surface-mount assemblies on heat-managed boards
What thermal extremes can it withstand in operation?
It is rated to operate from -55°C up to +150°C.
How many pins does the package present for PCB layout?
The device uses a three-pin configuration in SOT-223 format.
What forward conduction characteristic is relevant for low-voltage drop?
The typical forward voltage is 0.9V during conduction.
Is the device suitable for automotive qualification standards?
It meets AEC-Q101 requirements for automotive-grade use.
What environmental compliance is indicated for disposal and use?
It is RoHS-compliant.
Gerelateerde Links
- Infineon IPN N-Channel MOSFET 950 V, 3-Pin SOT-223
- Infineon IPN N-Channel MOSFET 75 V, 3-Pin SOT-223
- Infineon IPN N-Channel MOSFET 75 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- Infineon IPN N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN N-Channel MOSFET 600 V, 3-Pin SOT-223
- Infineon IPN N-Channel MOSFET 650 V, 3-Pin SOT-223 IPN60R2K0PFD7SATMA1
- Infineon IPN N-Channel MOSFET 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1
