Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- RS-stocknr.:
- 244-2270
- Fabrikantnummer:
- IPN60R600PFD7SATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 693,00
(excl. BTW)
€ 840,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,231 | € 693,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2270
- Fabrikantnummer:
- IPN60R600PFD7SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Gerelateerde Links
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 BSP125H6433XTMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon SIPMOS® N-Channel MOSFET 600 V, 3-Pin SOT-223 BSP125H6327XTSA1
- Infineon BSP135I N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- Infineon SIPMOS® N-Channel MOSFET 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R450P7SATMA1
- Infineon N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R1K2P7ATMA1