Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Depletion, 3-Pin SOT-223

RS-stocknr.:: 250-0529
Fabrikantnummer:: BSP129H6906XTSA1
Fabrikant:: Infineon

Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Depletion, 3-Pin SOT-223

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Subtotaal (1 rol van 1000 eenheden)*

€ 438,00

(excl. BTW)

€ 530,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 4.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,438	€ 438,00
2000 - 2000	€ 0,416	€ 416,00
3000 +	€ 0,389	€ 389,00

*prijsindicatie

RS-stocknr.:: 250-0529
Fabrikantnummer:: BSP129H6906XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.12A
	Maximum Drain Source Voltage Vds	40V
	Series	BSP
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.12A
	Maximum Drain Source Voltage Vds 40V
	Series BSP
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSP129H6906XTSA1

Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1

This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.

Features & Benefits

• N-channel configuration supports efficient switching operations

• Depletion mode functionality ensures constant current performance

• High voltage ratings provide versatility in applications

• Low gate threshold voltage enhances system compatibility

• Surface mount design allows for space-efficient installations

• AEC-Q101 qualified, suitable for automotive usage

Applications

• Suitable for automotive control systems

• Can be used in power management circuits

• Consumer electronics for enhanced efficiency

How can proper installation be ensured for optimal performance?

Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.

What should be considered for thermal management during operation?

Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.

What type of gate drive is recommended for this product?

A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.

Can this MOSFET be utilised in high-speed switching applications?

Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.

What should be noted regarding gate charge characteristics?

The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.