Vishay EF N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- RS-stocknr.:
- 252-0265
- Fabrikantnummer:
- SIHK075N60EF-T1GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 2000 eenheden)*
€ 6.124,00
(excl. BTW)
€ 7.410,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 3,062 | € 6.124,00 |
*prijsindicatie
- RS-stocknr.:
- 252-0265
- Fabrikantnummer:
- SIHK075N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.061Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 192W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.061Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 192W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Gerelateerde Links
- Vishay EF N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- Vishay EF N-Channel Power MOSFET 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- Vishay EF N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- Vishay SiH N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- Vishay EF N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay EF N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay EF N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3