Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

RS-stocknr.:: 252-0265
Fabrikantnummer:: SIHK075N60EF-T1GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

Subtotaal (1 rol van 2000 eenheden)*

€ 6.124,00

(excl. BTW)

€ 7.410,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 03 maart 2027

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Aantal stuks	Per stuk	Per rol*
2000 +	€ 3,062	€ 6.124,00

*prijsindicatie

RS-stocknr.:: 252-0265
Fabrikantnummer:: SIHK075N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.061Ω
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	192W
	Maximum Operating Temperature	+150°C
	Length	6.15mm
	Width	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.061Ω
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 192W
	Maximum Operating Temperature +150°C
	Length 6.15mm
	Width 5.15mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK075N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 192W Power Dissipation - SIHK075N60EF-T1GE3

This power MOSFET is a high-voltage N-channel semiconductor designed for demanding switching and power-control environments. It operates across a wide temperature range and is supplied in a low-profile surface-mount package suitable for compact assemblies. The device is intended for applications requiring substantial continuous current handling and robust voltage capability in constrained footprints.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching capability
• 33A continuous drain current supports heavy-load operation
• 0.061Ω Rds(on) reduces conduction losses under load
• 192W maximum dissipation allows high-power handling
• 72nC typical gate charge provides predictable switching behaviour
• AEC‑Q101 qualification supports automotive-grade thermal stress

Applications

• Suitable for traction and high-voltage vehicle power electronics
• Ideal for half-bridge and full-bridge switching topologies
• Used with isolated gate drivers in industrial inverters
• Can be used for switched-mode power supplies up to high voltage
• Appropriate for motor drive stages in automotive systems

What thermal range can it withstand in harsh environments?

It is rated to operate from -55°C up to +150°C, permitting use across low-temperature starts and elevated operating conditions.

Which package format does it use for PCB assembly?

The device is provided in a PowerPAK 10x12 surface-mount enclosure designed for efficient heat transfer and compact board placement.

How does the gate voltage limit affect drive design?

The maximum gate-source voltage is 20V, so gate drivers should be specified to remain within this boundary to prevent gate overstress.

Is it suitable for RoHS-restricted assemblies?

The component complies with RoHS requirements, permitting inclusion in assemblies that mandate restricted-substance adherence.