Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

RS-stocknr.:: 239-8632
Fabrikantnummer:: SiHH105N60EF-T1GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

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RS-stocknr.:: 239-8632
Fabrikantnummer:: SiHH105N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.091Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	174W
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.091Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 174W
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SiHH105N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 26A Continuous Drain Current - SiHH105N60EF-T1GE3

This power MOSFET is a high-voltage, N‑channel device intended for switching and power-conversion roles in automotive and industrial electronics. It operates across a wide temperature span and is designed as a surface‑mount component for Compact assemblies, providing robust high-voltage switching where thermal endurance and automotive qualification are required.

Features and Benefits:

• 650V drain voltage enables high-voltage switching applications • 26A continuous drain current supports sustained load currents • 0.091Ω low Rds(on) reduces conduction losses in switching stages • 174W power dissipation allows higher power handling in Compact layouts • 33nC typical gate charge facilitates controlled gate‑drive energy • ±30V gate tolerance accommodates varied gate‑drive voltages

Applications

• Suitable for automotive power converters and traction systems • Ideal for high-voltage switch‑mode power supplies in industrial automation • Used for inverter stages in motor‑drive • Can be used for primary‑side switching in SMPS topologies

What thermal range can this device tolerate during operation?

It is rated to operate from -55°C up to +150°C, allowing use in environments with large temperature variations.

How does the pin count and mounting affect PCB layout?

The four‑pin surface‑mount PowerPAK 8x8 package simplifies thermal routing and allows low‑inductance connections for high‑speed switching.

What gate‑drive considerations are necessary for reliable switching?

Gate drive should respect the ±30V maximum Vgs and be designed to manage the 33nC gate charge to control switching speed and minimise EMI.

Is the device suitable for automotive qualification requirements?

It complies with the AEC‑Q101 standard and is RoHS compliant, meeting typical automotive component acceptance criteria.