Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- RS-stocknr.:
- 252-0267
- Fabrikantnummer:
- SIHK185N60E-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 2000 eenheden)*
€ 3.226,00
(excl. BTW)
€ 3.904,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,613 | € 3.226,00 |
*prijsindicatie
- RS-stocknr.:
- 252-0267
- Fabrikantnummer:
- SIHK185N60E-T1-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHK185N60E-T1-GE3
Features and Benefits:
Applications
What operating temperature range can it withstand?
What package type is provided for PCB integration?
How does the device meet automotive development needs?
What are the physical footprint dimensions?
Gerelateerde Links
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L)
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8
