Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- RS-stocknr.:
- 252-0295
- Fabrikantnummer:
- SIZF5302DT-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,49
(excl. BTW)
€ 13,905
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,298 | € 11,49 |
| 50 - 120 | € 2,158 | € 10,79 |
| 125 - 245 | € 1,952 | € 9,76 |
| 250 - 495 | € 1,838 | € 9,19 |
| 500 + | € 1,724 | € 8,62 |
*prijsindicatie
- RS-stocknr.:
- 252-0295
- Fabrikantnummer:
- SIZF5302DT-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Dual N-Channel 30 V (D-S) MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Dual N-Channel 30 V (D-S) MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
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