Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET, 125 A, 30 V, 12-Pin PowerPAIR 3 x 3FS

Subtotaal (1 rol van 3000 eenheden)*

€ 2.043,00

(excl. BTW)

€ 2.472,00

(incl. BTW)

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RS-stocknr.:
252-0292
Fabrikantnummer:
SIZF5300DT-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 3 x 3FS

Series

SiZF5300DT

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.00351Ω

Typical Gate Charge Qg @ Vgs

9.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

56.8W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

3.3mm

Height

3.3mm

Standards/Approvals

No

Width

3.3 mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The Field-Effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Symmetric dual N-channel

Flip chip technology optimal thermal design

High side and low side MOSFETs form optimized

Combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency

For high frequency swi

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