Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS

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€ 1.728,00

(excl. BTW)

€ 2.091,00

(incl. BTW)

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RS-stocknr.:
252-0294
Fabrikantnummer:
SIZF5302DT-T1-RE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Dual N-Channel 30 V (D-S) MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 3 x 3FS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.0032Ω

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

48.1W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Symmetric dual N-channel

Flip chip technology optimal thermal design

High side and low side MOSFETs form optimized

Combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency

For high frequency swi

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