Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3

RS-stocknr.:: 256-7359
Fabrikantnummer:: SI3483DDV-T1-GE3
Fabrikant:: Vishay

Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3

Subtotaal (1 verpakking van 25 eenheden)*

€ 14,325

(excl. BTW)

€ 17,325

(incl. BTW)

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*prijsindicatie

RS-stocknr.:: 256-7359
Fabrikantnummer:: SI3483DDV-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-6.4A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TSOP-6
	Series	SI3483DDV
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.0513Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16V
	Typical Gate Charge Qg @ Vgs	4.5nC
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	3W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -6.4A
	Maximum Drain Source Voltage Vds -30V
	Package Type TSOP-6
	Series SI3483DDV
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.0513Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16V
	Typical Gate Charge Qg @ Vgs 4.5nC
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 3W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 1.1mm
	Automotive Standard No

Datasheet - SI3483DDV-T1-GE3

Vishay SI3483DDV Series MOSFET, -30V Maximum Drain Source Voltage, 0.0513Ω Maximum Drain Source Resistance - SI3483DDV-T1-GE3

This p-channel MOSFET is a surface-mount semiconductor device designed to control high-side switching and analogue power functions in Compact electronic systems. It operates with a 30V drain-to-source rating and is intended for use across a broad ambient temperature range, making it suitable for demanding industrial and automation environments where Compact power switching is required.

Features and Benefits:

• Low Rds(on) 0.0513Ω enabling reduced conduction losses • Continuous drain current 6.4A supporting moderate power loads • Typical gate charge 4.5nC permitting Faster gate switching • Maximum power dissipation 3W allowing sustained thermal load • Gate-source withstand 16V for tolerant gate-drive margins • Operable between -55°C and +150°C for high-temperature use

Applications

• Suitable for high-side load switching in automation equipment • Ideal for battery management circuits in portable systems • Used for analogue power control in industrial electronics • Can be used for thermally sensitive needing Compact SMD parts • Used with motor-control drivers requiring P-channel topology

What package type is used for Compact PCB layouts?

It is supplied in a TSOP-6 surface-mount package with six pins for tight board real estate.

How does the device behave under high junction temperatures?

It is rated to operate up to +150°C, allowing continued conduction and switching at elevated temperatures within specified limits.

What is the typical switching load characteristic to consider in drive design?

Typical gate charge is 4.5nC, which informs gate-drive energy and switching-loss calculations.

Which environmental approvals or material standards apply?

The component conforms to RoHS material restrictions for restricted-substance compliance.