Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

RS-stocknr.:: 180-7895
Fabrikantnummer:: SI3421DV-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 8,66

(excl. BTW)

€ 10,48

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 3.460 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,433	€ 8,66
200 - 480	€ 0,325	€ 6,50
500 - 980	€ 0,282	€ 5,64
1000 - 1980	€ 0,259	€ 5,18
2000 +	€ 0,204	€ 4,08

*prijsindicatie

RS-stocknr.:: 180-7895
Fabrikantnummer:: SI3421DV-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2.7W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	2.98 mm
	Height	1.1mm
	Length	3.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2.7W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 2.98 mm
	Height 1.1mm
	Length 3.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• DC/DC converter

• For mobile computing/consumer

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested