Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263

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Subtotaal (1 tube van 50 eenheden)*

€ 121,80

(excl. BTW)

€ 147,40

(incl. BTW)

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50 - 50€ 2,436€ 121,80
100 - 450€ 2,30€ 115,00
500 - 950€ 1,99€ 99,50
1000 +€ 1,693€ 84,65

*prijsindicatie

RS-stocknr.:
256-7410
Fabrikantnummer:
SIHB15N60E-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.28Ω

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 15A Continuous Drain Current - SIHB15N60E-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial electronics. It operates across a wide temperature range and is supplied in a Compact surface-mount package suitable for thermal management in board-level power assemblies.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications • 15A continuous current supports medium-power loads • 0.28 Ω on-resistance reduces conduction losses • 78 nC typical gate charge allows predictable switching behaviour • 180W power dissipation supports elevated load handling • 150 °C maximum operating temperature endures high thermal stress

Applications


• Suitable for high-voltage power supplies and converters • Ideal for motor-drive switching in automation systems • Used for industrial lighting and ballast-control circuits • Can be used for energy management and inverter stages • Used with heat-sinked boards in power-distribution modules

What gate voltage limits should be observed during design?


The device must not be subjected to gate-source voltages exceeding 30V to avoid gate-oxide stress.

How should thermal conditions be managed on a PCB?


Design a dedicated copper pad and heat-spreading area for the TO-263 package to maintain junction temperatures below rated limits under specified power dissipation.

What environmental temperature range can components be expected to tolerate?


It is specified to operate down to -55 °C and up to +150 °C, making it suitable for harsh ambient conditions and elevated junction scenarios.

Is this device matched to automotive specification levels?


It is not classified as an automotive-grade component and should be evaluated accordingly for vehicle applications.

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