Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF

RS-stocknr.:: 257-5546
Fabrikantnummer:: IRFR4615TRLPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 150 V Enhancement TO-252 IRFR4615TRLPBF

Subtotaal (1 rol van 3000 eenheden)*

€ 1.527,00

(excl. BTW)

€ 1.848,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 21 juni 2027

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,509	€ 1.527,00

*prijsindicatie

RS-stocknr.:: 257-5546
Fabrikantnummer:: IRFR4615TRLPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	PCB
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Power Dissipation Pd	144W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-252
	Series HEXFET
	Mount Type PCB
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Power Dissipation Pd 144W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFR4615TRLPBF

Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 33A Maximum Continuous Drain Current - IRFR4615TRLPBF

This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for PCB mounting in power switching roles. It handles substantial continuous current while operating across a wide ambient temperature range and is suitable where controlled gate drive and thermal management are required.

Features and Benefits:

• 42mΩ Rds(on) reduces conduction losses
• 150V Vds enables high-voltage switching
• 33A continuous current supports heavy loads
• 144W power dissipation allows sustained operation
• 26nC gate charge permits responsive switching

Applications

• Suitable for high-voltage DC-DC converters
• Ideal for power switching in inverters
• Used with motor-drive stages requiring high current
• Can be used for telecoms power supplies
• Suitable for industrial power management modules

What gate drive limits must be observed?

The gate-to-source rating is ±20V so gate drive amplitudes must remain within that range to avoid damage.

How does thermal performance affect mounting choices?

With a 144W dissipation rating, effective PCB copper areas or heatsinking are required to manage junction temperatures during sustained load.

What temperature extremes can the device tolerate?

It operates over a range from -55°C up to 175°C, allowing use in environments with wide thermal variation.

Is this component suitable for automotive qualification?

It is not specified as automotive-grade

conformity noted is RoHS only.