Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN IRFHM830TRPBF

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 8,82

(excl. BTW)

€ 10,67

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 3.590 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
10 - 90€ 0,882€ 8,82
100 - 240€ 0,838€ 8,38
250 - 490€ 0,804€ 8,04
500 - 990€ 0,767€ 7,67
1000 +€ 0,714€ 7,14

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
257-9389
Fabrikantnummer:
IRFHM830TRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

37W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFHM series is the 30V single n channel strong IRFET power mosfet in a PQFN 3.3x3.3 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Potential alternative to high RDS (on) Super SO 8 package


Gerelateerde Links