Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN
- RS-stocknr.:
- 257-5535
- Fabrikantnummer:
- IRFHS8242TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 4000 eenheden)*
€ 972,00
(excl. BTW)
€ 1.176,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 - 4000 | € 0,243 | € 972,00 |
| 8000 + | € 0,214 | € 856,00 |
*prijsindicatie
- RS-stocknr.:
- 257-5535
- Fabrikantnummer:
- IRFHS8242TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 2 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Length 2mm | ||
Width 2 mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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