N-Channel MOSFET, 166 A, 100 V PG-TO263-7 Infineon IPB032N10N5ATMA1

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot