Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1

RS-stocknr.:: 258-3955
Fabrikantnummer:: IRF150P220AKMA1
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1

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RS-stocknr.:: 258-3955
Fabrikantnummer:: IRF150P220AKMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	224A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	2.70mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 224A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-247
	Mount Type Surface
	Maximum Drain Source Resistance Rds 2.70mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF150P220AKMA1

Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 224A Continuous Drain Current - IRF150P220AKMA1

This MOSFET is a high‑power enhancement‑mode N‑channel transistor designed for demanding switching and power conversion roles. It operates across an extended temperature span and is packaged for surface mounting to support heat dissipation and robust handling in power assemblies. RoHS compliance indicates suitability for environments requiring restricted‑substance adherence.

Features and Benefits:

• Low on‑resistance reduces conduction losses and improves efficiency
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction

Applications

• Suitable for motor drive inverter stages in industrial equipment
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting

What is the device’s package type and mounting orientation?

It is supplied in a TO-247 package configured for surface‑mount assembly.

How does thermal range affect deployment in harsh environments?

The rated operating range from -55°C to +175°C permits use where both low‑temperature start‑up and high‑temperature resilience are required.

What channel configuration and gate mode does it use?

It is an N‑channel device operating in enhancement mode, suitable for common low‑side and high‑side switch designs.

What electrical characteristics reduce switching losses during operation?

A maximum drain‑source resistance of 2.70mΩ and a forward diode voltage of 1.2V together reduce conduction and recovery losses under heavy currents.

Is the device compliant with restricted‑substance requirements?

Yes, it meets RoHS requirements for restricted materials.