Infineon HEXFET N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222
- RS-stocknr.:
- 258-3958
- Fabrikantnummer:
- IRF200P222
- Fabrikant:
- Infineon
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 258-3958
- Fabrikantnummer:
- IRF200P222
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Series | HEXFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 182 A | |
| Maximum Drain Source Voltage (Vds) | 200 V | |
| Pin Count | 3 | |
| Package Type | TO-247AC | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Maximum Drain Source Resistance (Rds) | 6.6 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 556 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface, Through Hole | |
| Standards/Approvals | RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 135 nC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Series HEXFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 182 A | ||
Maximum Drain Source Voltage (Vds) 200 V | ||
Pin Count 3 | ||
Package Type TO-247AC | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Maximum Drain Source Resistance (Rds) 6.6 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 556 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface, Through Hole | ||
Standards/Approvals RoHS | ||
Typical Gate Charge (Qg) @ Vgs 135 nC | ||
The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
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