Infineon HEXFET Type N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 4,68
(excl. BTW)
€ 5,66
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.368 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,34 | € 4,68 |
| 20 - 48 | € 1,94 | € 3,88 |
| 50 - 98 | € 1,825 | € 3,65 |
| 100 - 198 | € 1,685 | € 3,37 |
| 200 + | € 1,57 | € 3,14 |
*prijsindicatie
- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET 30 V WDSON
- Infineon HEXFET Type N-Channel MOSFET 80 V WDSON
- Infineon HEXFET Type N-Channel MOSFET 80 V WDSON IRF6646TRPBF
- Infineon HEXFET MOSFET 25 V WDSON
- Infineon HEXFET MOSFET 25 V WDSON IRF6717MTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263 IRLS4030TRLPBF