Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDSON | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 770mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDSON | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 770mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
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