Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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(incl. BTW)
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Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 0,61 |
| 25 - 99 | € 0,41 |
| 100 + | € 0,22 |
*prijsindicatie
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SI9945CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SI9945CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.
TrenchFET technology delivers reduced switching losses
Optimised Qg, Qgd, and Qgs ratios enhance performance
100% tested for Rg and UIS ensures reliability
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