Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 1 eenheid)*
€ 0,61
(excl. BTW)
€ 0,74
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 juli 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 24 | € 0,61 |
| 25 - 99 | € 0,41 |
| 100 + | € 0,22 |
*prijsindicatie
- RS-stocknr.:
- 736-345
- Fabrikantnummer:
- SI9945CDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SI9945CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SI9945CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.
TrenchFET technology delivers reduced switching losses
Optimised Qg, Qgd, and Qgs ratios enhance performance
100% tested for Rg and UIS ensures reliability
Gerelateerde Links
- Vishay SI9634DY 4 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI9634DY-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Dual N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIRC06DP-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Vishay Type N 8 A 8-Pin SO-8 SI4534DY-T1-GE3
- Vishay SIRS Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3