Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

RS-stocknr.:: 268-8288
Fabrikantnummer:: SIHA150N60E-GE3
Fabrikant:: Vishay

Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

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RS-stocknr.:: 268-8288
Fabrikantnummer:: SIHA150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHA
	Package Type	PowerPAK SO-8DC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 650V
	Series SIHA
	Package Type PowerPAK SO-8DC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHA150N60E-GE3

Land van herkomst:: CN

Vishay SIHA Series MOSFET, 650V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA150N60E-GE3

This MOSFET is a high-voltage N‑channel switching device designed for surface‑mount power applications. It operates as an enhancement‑mode transistor suitable for industrial and electronic control environments where high‑voltage handling and Compact assembly are required.

Features and Benefits:

• 650V drain rating enables high‑voltage switching applications • 9 A continuous drain current supports moderate power loads • 0.158 Ω RDS(on) minimises conduction losses for efficiency • 36 nC typical gate charge allows predictable drive timing • 179W power dissipation manages substantial thermal loading • 150 °C maximum operating temperature permits elevated‑temperature use

Applications

• Suitable for high‑voltage power converters and inverters • Ideal for industrial motor‑drive switching stages • Used for switch‑mode power-supply primary‑side switches • Can be used for inductive‑load switching in automation systems

What gate‑drive constraints should I plan for?

The gate must be driven within ±30V with a typical gate charge of 36 nC

ensure your driver can supply the required charge and switching speed.

How should thermal management be approached for continuous operation?

With 179W dissipation capability and a maximum junction temperature of 150 °C, use appropriate PCB thermal vias, copper area, or heatsinking to maintain junction temperature within limits.

Is this device suitable for automotive qualification?

It is not specified as automotive‑standard compliant, so it should not be assumed suitable for certified automotive applications without additional validation.

What package and mounting considerations affect layout?

The device is supplied in a PowerPAK SO‑8DC surface‑mount package with eight pins

plan pad geometry and thermal pads for low thermal resistance and reliable solder joints.