Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

RS-stocknr.:: 268-8307
Fabrikantnummer:: SIHK085N60EF-T1GE3
Fabrikant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

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RS-stocknr.:: 268-8307
Fabrikantnummer:: SIHK085N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK085N60EF-T1GE3

Land van herkomst:: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHK085N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronics. It operates as an enhancement-mode transistor suitable for PCB mounting and is intended for demanding applications that require robust thermal tolerance and substantial current handling.

Features and Benefits:

• 650V rating enables high-voltage switching capability • 30A continuous drain current supports heavy load duty • 0.085Ω Rds(on) reduces conduction losses at switching • 63nC typical gate charge allows predictable gate-drive design • 184W power dissipation permits significant heat throughput • 150°C maximum junction temperature supports high-temperature operation

Applications

• Suitable for high-voltage DC-DC converters in automation systems • Ideal for motor drive front-ends requiring high current headroom • Used for switch-mode power supplies in industrial electronics • Can be used for inverter stages in power control equipment

What gate-drive constraints should be considered for use?

The device tolerates gate voltages up to 30V and exhibits a typical total gate charge of 63nC, so drivers must supply sufficient charge and slew control within that voltage limit.

How should thermal management be arranged on the PCB?

With a maximum dissipation of 184W and high junction capability, provide substantial copper area, thermal vias and an appropriate heatsink attachment pattern to maintain safe operating temperatures.

What environmental temperature range will it tolerate during operation?

It operates down to -55°C and up to a maximum of 150°C, allowing deployment across broad ambient and elevated junction scenarios.

Which mounting approach is required for reliable assembly?

The part is intended for PCB mount in a PowerPAK 10x12 package with an 8-pin interface, so standard soldering processes for power packages should be used.