Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- RS-stocknr.:
- 268-8308
- Fabrikantnummer:
- SIHK105N60EF-T1GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 2000 eenheden)*
€ 5.280,00
(excl. BTW)
€ 6.380,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 2,64 | € 5.280,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8308
- Fabrikantnummer:
- SIHK105N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHK105N60EF-T1GE3
This MOSFET is a high-voltage N-channel semiconductor switch designed for power conversion and switching duties in industrial electronics. It operates across a wide temperature range and mounts to printed circuit boards in an 8‑pin package, delivering a balance of switching capability and thermal handling suitable for demanding electrical control environments.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.105Ω Rds(on) reduces conduction losses during operation • 51nC gate charge allows controlled switching performance • 142W power dissipation assists in high-power handling on PCB • ±30V gate tolerance permits broad gate-drive margin
Applications
• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for DC-DC conversion in automation systems • Can be used for switch-mode power controllers in machinery • Suitable for power switching in electrical distribution units
What thermal extremes can this device tolerate during operation?
It is rated to function from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.
How many pins and what mounting style does it require on a board?
It is provided in an 8‑pin configuration intended for PCB mounting in a PowerPAK 10x12 footprint.
What kind of gate-drive constraints should be observed?
The device accepts up to 30V between gate and source, so gate-drive circuitry should remain within that limit to avoid damage.
How does the device meet environmental material restrictions?
It conforms to RoHS requirements, indicating restricted hazardous substance compliance.
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