Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

RS-stocknr.:: 268-8309
Fabrikantnummer:: SIHK105N60EF-T1GE3
Fabrikant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 11,64

(excl. BTW)

€ 14,08

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

2.050 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 48	€ 5,82	€ 11,64
50 - 98	€ 5,23	€ 10,46
100 - 248	€ 4,28	€ 8,56
250 - 998	€ 4,195	€ 8,39
1000 +	€ 3,23	€ 6,46

*prijsindicatie

RS-stocknr.:: 268-8309
Fabrikantnummer:: SIHK105N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.105Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	142W
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.105Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 142W
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK105N60EF-T1GE3

Land van herkomst:: CN

Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHK105N60EF-T1GE3

This MOSFET is a high-voltage N-channel semiconductor switch designed for power conversion and switching duties in industrial electronics. It operates across a wide temperature range and mounts to printed circuit boards in an 8‑pin package, delivering a balance of switching capability and thermal handling suitable for demanding electrical control environments.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.105Ω Rds(on) reduces conduction losses during operation • 51nC gate charge allows controlled switching performance • 142W power dissipation assists in high-power handling on PCB • ±30V gate tolerance permits broad gate-drive margin

Applications

• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for DC-DC conversion in automation systems • Can be used for switch-mode power controllers in machinery • Suitable for power switching in electrical distribution units

What thermal extremes can this device tolerate during operation?

It is rated to function from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.

How many pins and what mounting style does it require on a board?

It is provided in an 8‑pin configuration intended for PCB mounting in a PowerPAK 10x12 footprint.

What kind of gate-drive constraints should be observed?

The device accepts up to 30V between gate and source, so gate-drive circuitry should remain within that limit to avoid damage.

How does the device meet environmental material restrictions?

It conforms to RoHS requirements, indicating restricted hazardous substance compliance.