Vishay SiR Type N-Channel MOSFET, 73 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- RS-stocknr.:
- 268-8331
- Fabrikantnummer:
- SIR184LDP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,40
(excl. BTW)
€ 11,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 6.000 stuk(s) vanaf 31 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,88 | € 9,40 |
| 50 - 95 | € 1,682 | € 8,41 |
| 100 - 245 | € 1,318 | € 6,59 |
| 250 - 995 | € 1,284 | € 6,42 |
| 1000 + | € 0,85 | € 4,25 |
*prijsindicatie
- RS-stocknr.:
- 268-8331
- Fabrikantnummer:
- SIR184LDP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0058Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0058Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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