Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- RS-stocknr.:
- 268-8333
- Fabrikantnummer:
- SIR5708DP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,22
(excl. BTW)
€ 9,945
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 35 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,644 | € 8,22 |
| 50 - 95 | € 1,472 | € 7,36 |
| 100 - 245 | € 1,154 | € 5,77 |
| 250 - 995 | € 1,128 | € 5,64 |
| 1000 + | € 0,744 | € 3,72 |
*prijsindicatie
- RS-stocknr.:
- 268-8333
- Fabrikantnummer:
- SIR5708DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33.8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33.8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Gerelateerde Links
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay N-Channel MOSFET 80 V PowerPAK SO-8 SIR120DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR826LDP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3