Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin TO-263 IPB65R660CFDAATMA1
- RS-stocknr.:
- 273-2999
- Fabrikantnummer:
- IPB65R660CFDAATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 684,00
(excl. BTW)
€ 828,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 0,684 | € 684,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2999
- Fabrikantnummer:
- IPB65R660CFDAATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.66Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.66Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2