Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 273-3000
- Fabrikantnummer:
- IPB65R660CFDAATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,79
(excl. BTW)
€ 4,586
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 998 stuk(s) vanaf 10 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 48 | € 1,895 | € 3,79 |
| 50 - 98 | € 1,58 | € 3,16 |
| 100 - 248 | € 1,255 | € 2,51 |
| 250 - 498 | € 1,165 | € 2,33 |
| 500 + | € 1,05 | € 2,10 |
*prijsindicatie
- RS-stocknr.:
- 273-3000
- Fabrikantnummer:
- IPB65R660CFDAATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.66Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.66Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
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