Vishay SIS Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3
- RS-stocknr.:
- 279-9975
- Fabrikantnummer:
- SIS4634LDN-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 279-9975
- Fabrikantnummer:
- SIS4634LDN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIS | |
| Package Type | 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.029Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 19.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIS | ||
Package Type 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.029Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 19.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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