Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3
- RS-stocknr.:
- 280-0000
- Fabrikantnummer:
- SISS5623DN-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (in een pakket van 4)
€ 10,30
(excl. BTW)
€ 12,46
(incl. BTW)
- RS-stocknr.:
- 280-0000
- Fabrikantnummer:
- SISS5623DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiSS5623DN | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.046Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 56.8W | |
| Typical Gate Charge Qg @ Vgs | 10.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiSS5623DN | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.046Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 56.8W | ||
Typical Gate Charge Qg @ Vgs 10.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
Gerelateerde Links
- Vishay SiSS5623DN Type P-Channel MOSFET 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3
- Vishay SISS Type P-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3
- Vishay Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3