Vishay SIZF4800LDT 2 Type N-Channel MOSFET, 36 A, 80 V Enhancement, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- RS-stocknr.:
- 280-0006
- Fabrikantnummer:
- SIZF4800LDT-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 4 eenheden)*
€ 8,512
(excl. BTW)
€ 10,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 4 - 56 | € 2,128 | € 8,51 |
| 60 - 96 | € 1,595 | € 6,38 |
| 100 - 236 | € 1,425 | € 5,70 |
| 240 - 996 | € 1,393 | € 5,57 |
| 1000 + | € 1,368 | € 5,47 |
*prijsindicatie
- RS-stocknr.:
- 280-0006
- Fabrikantnummer:
- SIZF4800LDT-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | 3 x 3FS | |
| Series | SIZF4800LDT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 80 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101, RoHS, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type 3 x 3FS | ||
Series SIZF4800LDT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 80 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
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