Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF

RS-stocknr.:: 281-6027
Artikelnummer Distrelec:: 171-16-205
Fabrikantnummer:: IRF840PBF
Fabrikant:: Vishay

Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF

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Subtotaal (1 tube van 1000 eenheden)*

€ 865,00

(excl. BTW)

€ 1.047,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 29 januari 2027

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Aantal stuks	Per stuk	Per tube*
1000 - 1000	€ 0,865	€ 865,00
2000 - 4000	€ 0,816	€ 816,00
5000 +	€ 0,741	€ 741,00

*prijsindicatie

RS-stocknr.:: 281-6027
Artikelnummer Distrelec:: 171-16-205
Fabrikantnummer:: IRF840PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF840
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	850mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	2V
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 500V
	Series IRF840
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 850mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 2V
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Land van herkomst:: CN

Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 125W Power Dissipation - IRF840PBF

This power MOSFET is a high-voltage semiconductor device intended for switching and amplification in power electronics. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package suited to heatsinking. The component is RoHS-compliant and employs an N-channel enhancement topology for controlling drain-source conduction in high-voltage circuits.

Features and Benefits:

• 500V drain-source rating for high-voltage applications
• 8A continuous drain current supports sustained loads
• 125W power dissipation for elevated thermal handling
• 850mΩ Rds(on) balances conduction losses and control simplicity
• 63nC total gate charge enables predictable switching control
• 20V maximum gate-source voltage allows robust gate drive

Applications

• Suitable for switch-mode power supply output stages
• Used with high-voltage motor drive circuits
• Ideal for industrial inverter switching elements
• Can be used for DC-DC converter high-side transistors
• Used for laboratory power test rigs and prototype boards

What ambient temperatures can it tolerate during operation?

It is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.

How should it be mounted for optimal thermal performance?

The TO-220AB through-hole format is designed for attachment to a heatsink using the tab and fastener to maximise thermal conduction.

What gate drive constraints must designers observe?

Gate-source voltage must not exceed 20V

typical gate drive circuitry should provide controlled transitions to manage the 63nC gate charge.

Are there any automotive-grade assurances for use in vehicles?

It is not listed as an automotive standard device, so designers should assess suitability before vehicle applications.