Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF

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Verpakkingsopties
RS-stocknr.:
281-6028
Artikelnummer Distrelec:
304-42-105
Fabrikantnummer:
IRF840PBF
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220AB

Series

IRF840

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
CN

Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 8A Continuous Drain Current - IRF840PBF


This power MOSFET is a high-voltage N-channel transistor designed for switching and power-handling roles in industrial and electronic systems. It operates over a wide ambient range and is supplied in a through-hole TO-220 package for straightforward mounting and heatsinking in control assemblies.

Features and Benefits:


• 500V drain voltage supports high-voltage switching applications
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits

What ambient temperature range can it tolerate in operation?


It operates between -55 °C and 150 °C, allowing use in harsh thermal environments and elevated junction scenarios.

How is it mounted and cooled in a system?


It is supplied in a TO-220AB through-hole package enabling bolted heatsink attachment for efficient thermal management.

What gate drive constraints should designers observe?


Gate drive must remain within ±20V to avoid exceeding the maximum gate-source rating and to preserve device integrity.

How does switching performance relate to gate charge?


The typical 63 nC gate charge gives designers a basis on which to calculate driver current and switching transition times for specified drive voltages.

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