Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640NPBF

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RS-stocknr.:
541-0014
Artikelnummer Distrelec:
303-41-285
Fabrikantnummer:
IRF640NPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

67nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Width

4.69 mm

Standards/Approvals

No

Length

10.67mm

Height

8.77mm

Automotive Standard

No

Distrelec Product Id

30341285

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF


This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits


• Continuous drain current up to 18A for robust power handling

• Operates effectively at voltage levels up to 200V for increased versatility

• Low on-resistance minimises energy loss during operation

• Simplified drive requirements facilitate integration into circuits

• Fully avalanche rated for enhanced safety and performance

Applications


• Utilised in power supply circuits for industrial automation

• Suitable for motor control in robotics

• Ideal for renewable energy systems such as solar inverters

• Employed in power switching systems for electrical equipment

• Utilised in amplification stages for audio equipment

How does temperature affect the performance?


The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?


The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?


Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?


Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.

Is it suitable for surface mount applications?


The TO-220AB package is specifically designed for through-hole mounting, ensuring effective heat dissipation rather than surface mounting.

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