Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF

RS-stocknr.:: 688-6939
Artikelnummer Distrelec:: 304-43-452
Fabrikantnummer:: IRFB4020PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 11,51

(excl. BTW)

€ 13,925

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

105 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 445 stuk(s) vanaf 01 september 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 2,302	€ 11,51
50 - 120	€ 2,072	€ 10,36
125 - 245	€ 1,932	€ 9,66
250 - 495	€ 1,798	€ 8,99
500 +	€ 1,68	€ 8,40

*prijsindicatie

RS-stocknr.:: 688-6939
Artikelnummer Distrelec:: 304-43-452
Fabrikantnummer:: IRFB4020PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82mm
	Length	10.66mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 9.02mm
	Width 4.82mm
	Length 10.66mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - IRFB4020PBF

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where robust thermal endurance is required. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical solution for discrete power stages and board-mounted switching circuits across a wide temperature range.

Features and Benefits:

• 200V drain rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery

Applications

• Suitable for motor-drive half-bridge stages
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments

What gate-voltage limits should designers observe for safe operation?

The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and to maintain reliable switching behaviour.

How does the device perform across temperature extremes?

It is rated to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation while maintaining specified electrical characteristics.

What package considerations affect PCB layout and cooling?

The TO-220 through-hole form factor provides a single insulated mounting tab and allows direct attachment to a heatsink or chassis for improved thermal management.

How does the body diode influence switching-topology choice?

The intrinsic diode with a 1.3V forward drop should be accounted for in designs with reverse-recovery events to manage dissipation and determine snubber requirements.