Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250NPBF

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RS-stocknr.:
541-0042
Fabrikantnummer:
IRFP250NPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

123nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.3mm

Width

5.3 mm

Length

15.9mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF


This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits


• Continuous drain current rating of 30A supports robust performance

• Power dissipation capacity of 214W accommodates heavy-duty applications

• Maximum drain-source voltage of 200V contributes to device reliability

• Low Rds(on) of 75 mΩ minimises energy loss during operation

• Enhancement mode improves control and efficiency in circuit applications

• Compatible with TO-247AC package for seamless integration into existing systems

Applications


• Power supplies for industrial automation

• Driving high-current loads in electronic circuits

• Converters and inverters in renewable energy systems

• Motor control requiring fast switching

How does this MOSFET handle high temperatures?


With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?


A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?


Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?


The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

What is the significance of the avalanche ratings?


The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.

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