Name: Infineon Single HEXFET 1 Type N-Channel MOSFET, 23 A, 150 V Enhancement, 3-Pin TO-220AB IRF3315PBF
Brand: Infineon
SKU: 542-9226
Price: 1.79 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	94W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Number of Elements per Chip	1

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 94W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Number of Elements per Chip 1

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRF3315PBF

This high-performance MOSFET is designed for a variety of electronic applications. With an N-channel configuration, it plays a vital role in power management solutions, enabling efficient switching in circuits that handle high current and voltage levels. Its robust features meet the requirements of automation, electronics, and mechanical applications.

Features & Benefits

• Continuous drain current rating supports demanding applications

• Maximum drain-source voltage of 150V ensures dependable performance

• Low Rds(on) value reduces power loss in high-frequency applications

• Operable at temperatures up to +175°C for enhanced durability

• Dual gate threshold voltage range ensures compatibility with various circuits

• Suitable for enhancement mode operation for increased performance flexibility

Applications

• Utilised in power supply circuits for effective voltage regulation

• Integrated into motor control solutions for optimal output management

• Used in automotive that require dependability

• Applicable in industrial automation systems that demand precision

• Employed in renewable energy systems to improve power management

How can I determine the suitability for my application?

Evaluating specifications such as maximum current and voltage ratings will help ascertain compatibility with your application’s requirements.

What installation considerations should I be aware of?

Proper heatsinking and thermal management should be ensured, given the potential for high power dissipation and maximum operating temperatures.

How does the gate threshold voltage affect functionality?

The threshold voltage impacts the device’s switching characteristics and must align with the driving signal levels in your circuit for optimal performance.

Can it handle high-frequency switching applications?

Yes, its low Rds(on) and fast switching characteristics make it suitable for high-frequency operations without excessive heat generation.

What is the expected lifespan of the component under continuous use?

Lifespan varies based on operating conditions, but keeping temperatures below maximum ratings can significantly enhance longevity and reliability.

Infineon Single HEXFET 1 Type N-Channel MOSFET, 23 A, 150 V Enhancement, 3-Pin TO-220AB IRF3315PBF