Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK IRFU9310PBF
- RS-stocknr.:
- 542-9967
- Fabrikantnummer:
- IRFU9310PBF
- Fabrikant:
- Vishay
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€ 1,94
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,94 |
*prijsindicatie
- RS-stocknr.:
- 542-9967
- Fabrikantnummer:
- IRFU9310PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -1.8A | |
| Maximum Drain Source Voltage Vds | -400V | |
| Series | IRFU9310 | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | -4V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 2.38mm | |
| Standards/Approvals | RoHS | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -1.8A | ||
Maximum Drain Source Voltage Vds -400V | ||
Series IRFU9310 | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf -4V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 2.38mm | ||
Standards/Approvals RoHS | ||
Height 6.22mm | ||
Automotive Standard No | ||
Vishay IRFU9310 Series Power MOSFET, -400V Maximum Drain Source Voltage, 50W Maximum Power Dissipation - IRFU9310PBF
This power MOSFET is a P-channel enhancement transistor designed for high-voltage switching applications where through-hole mounting is required. It operates over a wide temperature range and is RoHS-compliant, offering a compact IPAK package suited to circuits needing low continuous currents and robust voltage handling without surface-mount assembly.
Features and Benefits:
• Rated for -400V drain-source voltage enabling high-voltage switching
• Maximum continuous drain current of -1.8A supporting low-current loads
• Maximum dissipation 50W allowing higher power handling in thermal designs
• Drain-source resistance 7Ω reducing conduction losses at low currents
• Gate charge 13nC at 20V Vgs permitting predictable switching performance
• Operates from -55°C to 150°C for elevated temperature environments
• Maximum continuous drain current of -1.8A supporting low-current loads
• Maximum dissipation 50W allowing higher power handling in thermal designs
• Drain-source resistance 7Ω reducing conduction losses at low currents
• Gate charge 13nC at 20V Vgs permitting predictable switching performance
• Operates from -55°C to 150°C for elevated temperature environments
Applications
• Suitable for high-voltage reverse-polarity protection circuits
• Ideal for valve or actuator control in industrial systems
• Used with discrete switching stages in power supplies
• Can be used for telecom line protection in legacy equipment
• Used for low-current load switching in instrumentation
• Ideal for valve or actuator control in industrial systems
• Used with discrete switching stages in power supplies
• Can be used for telecom line protection in legacy equipment
• Used for low-current load switching in instrumentation
What package type will I mount on a PCB for prototyping?
It is supplied in an IPAK through-hole package with three pins for conventional soldering and prototyping on drilled boards.
How should thermal limits guide heatsinking in designs?
The device’s 50W maximum dissipation requires a suitable heatsink or thermal path when switching near rated current or in elevated ambient temperatures to avoid exceeding junction limits.
What gate drive considerations are necessary for switching?
Expect a typical gate charge of 13nC at 20V Vgs
design gate drivers to supply sufficient charge quickly to meet desired switching speeds while managing gate-source voltage within ±20V.
Is it suitable for automotive electronics?
It is not specified as automotive grade
evaluate system requirements and environmental qualifications before use in vehicle applications.
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